Quantified density of performance-degrading near-interface traps in SiC MOSFETs
Abstract Characterization of near-interface traps (NITs) in commercial SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this wo...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Nature Portfolio
2022-03-01
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| Serier: | Scientific Reports |
| Online adgang: | https://doi.org/10.1038/s41598-022-08014-5 |
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