A Reliable Technology for Advanced SiC-MOS Devices Based on Fabrication of High Quality Silicon Oxide Layers by Converting a-Si
An alternative technological approach is proposed to obtain a SiO2 film on SiC using processes that finally reduce the effective fabrication costs. Accordingly, we report achieving of a high-quality oxide on 4H-SiC substrate using a process flow that consists in a preliminary deposition by sputterin...
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| Principais autores: | , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2019-01-01
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| Colecção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/8573870/ |
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