Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

This paper presents the results of a study of silicon diffusion-doped with germanium impurity atoms. For the diffusion of germanium impurity atoms, the original single-crystal silicon of the KEF-100 brand was used, in which the phosphorus concentration was equal to Np≈5ꞏ1013cm-3. The selection of su...

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Detalles Bibliográficos

Principais autores:	Nurulla F. Zikrillaev, Feruza E. Urakova, Alisher R. Toshev, Giyosiddin A. Kushiev, Temur B. Ismailov, Yoldoshali A. Abduganiev, Nemat Norkulov
Formato:	Artigo
Idioma:	Inglês
Publicado:	V.N. Karazin Kharkiv National University Publishing 2025-03-01
Series:	East European Journal of Physics
Assuntos:	silicon compounds diffusion germanium v impurity physical mechanism
Acceso en liña:	https://periodicals.karazin.ua/eejp/article/view/24567
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