Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

This paper presents the results of a study of silicon diffusion-doped with germanium impurity atoms. For the diffusion of germanium impurity atoms, the original single-crystal silicon of the KEF-100 brand was used, in which the phosphorus concentration was equal to Np≈5ꞏ1013cm-3. The selection of su...

Popoln opis

Bibliografske podrobnosti

Principais autores:	Nurulla F. Zikrillaev, Feruza E. Urakova, Alisher R. Toshev, Giyosiddin A. Kushiev, Temur B. Ismailov, Yoldoshali A. Abduganiev, Nemat Norkulov
Format:	Artigo
Jezik:	Inglês
Izdano:	V.N. Karazin Kharkiv National University Publishing 2025-03-01
Serija:	East European Journal of Physics
Teme:	silicon compounds diffusion germanium v impurity physical mechanism
Online dostop:	https://periodicals.karazin.ua/eejp/article/view/24567
Oznake:	Označite Brez oznak, prvi označite!