Investigation of the Behavior of Nickel Impurity Atoms in the Silicon Lattice Based on First Principles

This work presents a comprehensive theoretical and experimental study of the behavior of nickel impurity atoms in the silicon crystal lattice. The focus is on analyzing diffusion mechanisms, the energetic characteristics of interstitial nickel atoms, their interaction with defects and other impuriti...

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Hlavní autoři:	Bayrambay K. Ismaylov, Kanatbay A. Ismailov, Nurulla F. Zikrillaev, Atabek E. Atamuratov, Sergey V. Koveshnikov, Zoir T. Kenzhaev, Makhkam M. Khalilloev, Parakhat K. Dilimbetov
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	V.N. Karazin Kharkiv National University Publishing 2025-09-01
Edice:	East European Journal of Physics
Témata:	nickel silicon diffusion clusters interstitial atoms first-principles activation energy quantum mechanical modeling gettering semiconductors
On-line přístup:	https://periodicals.karazin.ua/eejp/article/view/26486
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