Investigation of the Behavior of Nickel Impurity Atoms in the Silicon Lattice Based on First Principles

This work presents a comprehensive theoretical and experimental study of the behavior of nickel impurity atoms in the silicon crystal lattice. The focus is on analyzing diffusion mechanisms, the energetic characteristics of interstitial nickel atoms, their interaction with defects and other impuriti...

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מידע ביבליוגרפי

Principais autores:	Bayrambay K. Ismaylov, Kanatbay A. Ismailov, Nurulla F. Zikrillaev, Atabek E. Atamuratov, Sergey V. Koveshnikov, Zoir T. Kenzhaev, Makhkam M. Khalilloev, Parakhat K. Dilimbetov
פורמט:	Artigo
שפה:	Inglês
יצא לאור:	V.N. Karazin Kharkiv National University Publishing 2025-09-01
סדרה:	East European Journal of Physics
נושאים:	nickel silicon diffusion clusters interstitial atoms first-principles activation energy quantum mechanical modeling gettering semiconductors
גישה מקוונת:	https://periodicals.karazin.ua/eejp/article/view/26486
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