Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

This paper presents the results of a study of silicon diffusion-doped with germanium impurity atoms. For the diffusion of germanium impurity atoms, the original single-crystal silicon of the KEF-100 brand was used, in which the phosphorus concentration was equal to Np≈5ꞏ1013cm-3. The selection of su...

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Principais autores:	Nurulla F. Zikrillaev, Feruza E. Urakova, Alisher R. Toshev, Giyosiddin A. Kushiev, Temur B. Ismailov, Yoldoshali A. Abduganiev, Nemat Norkulov
格式:	Artigo
語言:	Inglês
出版:	V.N. Karazin Kharkiv National University Publishing 2025-03-01
叢編:	East European Journal of Physics
主題:	silicon compounds diffusion germanium v impurity physical mechanism
在線閱讀:	https://periodicals.karazin.ua/eejp/article/view/24567
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