CNTFET-based SRAM cell design using INDEP technique
As the size of the transistor decreases in the nanoscale regime, certain parameters, such as, cell stability, power dissipation, and delay, have changed. This poses a significant challenge when attempting to scale down metal oxide semiconductor field effect transistor (MOSFET). The carbon nanotube f...
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| Главные авторы: | , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Elsevier
2024-03-01
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| Серии: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Предметы: | |
| Online-ссылка: | http://www.sciencedirect.com/science/article/pii/S2772671124000597 |
| Метки: |
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