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Impact of material and structural parameters on the performance of advanced low-power CNTFET-based SRAM designs

Abstract This paper comprehensively evaluates the efficiency of various Carbon Nanotube Field-Effect Transistor (CNTFET)-based static random-access memory (SRAM) cell topologies, including 6T, 8T, 10T, and a modified 10T SRAM design. By employing low-power approaches and utilizing Cadence Virtuoso a...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Mahamudul Hassan Fuad, Md Faysal Nayan
Format: Artigo
Sprache:Inglês
Veröffentlicht: Nature Portfolio 2026-04-01
Schriftenreihe:Scientific Reports
Schlagworte:
CNTFET
SRAM
Tube diameter
Dielectric constant
Delay
Power consumption
Online-Zugang:https://doi.org/10.1038/s41598-026-47254-7
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