Código QR (código de barras bidimensional)

3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer

To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of replacing the spacer region material of 3D NA...

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Principais autores: Yun-Jae Oh, Inyoung Lee, Yunejae Suh, Daewoong Kang, Il Hwan Cho
פורמט: Artigo
שפה:Inglês
יצא לאור: IEEE 2023-01-01
סדרה:IEEE Access
נושאים:
3D NAND flash memory
multiple dielectric spacer
retention
interference
electron trap charge
lateral migration
גישה מקוונת:https://ieeexplore.ieee.org/document/10278392/
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