Trade-off of Program Speed and Z-Interference According to Trap Position in 3-D NAND Flash Memory
This work proposes a distance-dependent trap model to overcome the limitations of conventional Technology Computer-Aided Design (TCAD) models, which fail to accurately represent the non-uniform charge distribution resulting from electron energy relaxation under strong tunneling conditions in 3D NAND...
I tiakina i:
| Ngā kaituhi matua: | , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
IEEE
2026-01-01
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| Rangatū: | IEEE Journal of the Electron Devices Society |
| Ngā marau: | |
| Urunga tuihono: | https://ieeexplore.ieee.org/document/11527313/ |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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