Trade-off of Program Speed and Z-Interference According to Trap Position in 3-D NAND Flash Memory
This work proposes a distance-dependent trap model to overcome the limitations of conventional Technology Computer-Aided Design (TCAD) models, which fail to accurately represent the non-uniform charge distribution resulting from electron energy relaxation under strong tunneling conditions in 3D NAND...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
IEEE
2026-01-01
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| Col·lecció: | IEEE Journal of the Electron Devices Society |
| Matèries: | |
| Accés en línia: | https://ieeexplore.ieee.org/document/11527313/ |
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