3D NAND Flash Memory Cell Current and Interference Characteristics Improvement With Multiple Dielectric Spacer
To achieve high density, the spacer length of three dimensional (3D) NAND device has been scaled down. When the program/erase cycle repeats, problems such as electrons accumulation in the inter-cell region are occurred. To solve this problem, a method of replacing the spacer region material of 3D NA...
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| Autores principales: | , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
IEEE
2023-01-01
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| Colección: | IEEE Access |
| Materias: | |
| Acceso en línea: | https://ieeexplore.ieee.org/document/10278392/ |
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