Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference
Minimizing the variation in threshold voltage (<i>V<sub>t</sub></i>) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently. In this work, a recent program scheme to write the cells from the top, for instance the 170th layer, to...
Wedi'i Gadw mewn:
| Prif Awduron: | , |
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| Fformat: | Artigo |
| Iaith: | Inglês |
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MDPI AG
2021-05-01
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| Cyfres: | Micromachines |
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| Mynediad Ar-lein: | https://www.mdpi.com/2072-666X/12/5/584 |
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