Novel Program Scheme of Vertical NAND Flash Memory for Reduction of Z-Interference
Minimizing the variation in threshold voltage (<i>V<sub>t</sub></i>) of programmed cells is required to the extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently. In this work, a recent program scheme to write the cells from the top, for instance the 170th layer, to...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
MDPI AG
2021-05-01
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| Series: | Micromachines |
| Assuntos: | |
| Acceso en liña: | https://www.mdpi.com/2072-666X/12/5/584 |
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