Si‐Based GeSn Lateral p–i–n Waveguide Photodetectors Covering Entire Short‐Wave Infrared Band
GeSn has emerged as a promising alternative in Si photonics due to its narrow and tunable bandgap. In this study, GeSn waveguide photodetectors (WGPDs) based on a lateral p–i–n homojunction architecture are demonstrated. Incorporating 10.82% Sn effectively reduces the bandgap, extending the photodet...
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| Autores principales: | , , , , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Wiley-VCH
2026-03-01
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| Colección: | Advanced Photonics Research |
| Materias: | |
| Acceso en línea: | https://doi.org/10.1002/adpr.202500243 |
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