Si‐Based GeSn Lateral p–i–n Waveguide Photodetectors Covering Entire Short‐Wave Infrared Band
GeSn has emerged as a promising alternative in Si photonics due to its narrow and tunable bandgap. In this study, GeSn waveguide photodetectors (WGPDs) based on a lateral p–i–n homojunction architecture are demonstrated. Incorporating 10.82% Sn effectively reduces the bandgap, extending the photodet...
Tallennettuna:
| Päätekijät: | , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Wiley-VCH
2026-03-01
|
| Sarja: | Advanced Photonics Research |
| Aiheet: | |
| Linkit: | https://doi.org/10.1002/adpr.202500243 |
| Tagit: |
Ei tageja, Lisää ensimmäinen tagi!
|