Si‐Based GeSn Lateral p–i–n Waveguide Photodetectors Covering Entire Short‐Wave Infrared Band

GeSn has emerged as a promising alternative in Si photonics due to its narrow and tunable bandgap. In this study, GeSn waveguide photodetectors (WGPDs) based on a lateral p–i–n homojunction architecture are demonstrated. Incorporating 10.82% Sn effectively reduces the bandgap, extending the photodet...

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Hlavní autoři:	Cheng‐Ting Kuo, Ting‐Yu Chen, Po‐Rei Huang, Yue‐Tong Jheng, Devesh Barshilia, Guo‐En Chang
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2026-03-01
Edice:	Advanced Photonics Research
Témata:	GeSn alloy lateral waveguide photodetectors short‐wave infrared
On-line přístup:	https://doi.org/10.1002/adpr.202500243
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