Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing

Abstract A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL...

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Үндсэн зохиолчид:	Anna P. S. Crema, Marian C. Istrate, Alexandre Silva, Veniero Lenzi, Leonardo Domingues, Megan O. Hill, Valentin S. Teodorescu, Corneliu Ghica, Maria J. M. Gomes, Mario Pereira, Luís Marques, Judith L. MacManus‐Driscoll, José P. B. Silva
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley 2023-05-01
Цуврал:	Advanced Science
Нөхцлүүд:	binary oxides ferroelectricity nanosecond laser annealing orthorhombic phase
Онлайн хандалт:	https://doi.org/10.1002/advs.202207390
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!