Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

Silicon Carbide MOSFETs have lower switching losses when compared to similarly rated Silicon IGBT, but exhibit faster switching edges, larger overshoots and increased oscillatory switching behaviour, resulting in greater electro-magnetic interference (EMI) generation. Active Gate Drivers (AGD) can h...

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Principais autores:	Mason Parker, Ilker Sahin, Ross Mathieson, Stephen Finney, Paul D. Judge
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2023-01-01
coleção:	IEEE Open Journal of Power Electronics
Assuntos:	Active gate driving AGD Silicon Carbide SiC EMI reduction timing resolution
Acesso em linha:	https://ieeexplore.ieee.org/document/10054505/
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