Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module

Silicon Carbide MOSFETs have lower switching losses when compared to similarly rated Silicon IGBT, but exhibit faster switching edges, larger overshoots and increased oscillatory switching behaviour, resulting in greater electro-magnetic interference (EMI) generation. Active Gate Drivers (AGD) can h...

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Главные авторы:	Mason Parker, Ilker Sahin, Ross Mathieson, Stephen Finney, Paul D. Judge
Формат:	Artigo
Язык:	Inglês
Опубликовано:	IEEE 2023-01-01
Серии:	IEEE Open Journal of Power Electronics
Предметы:	Active gate driving AGD Silicon Carbide SiC EMI reduction timing resolution
Online-ссылка:	https://ieeexplore.ieee.org/document/10054505/
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