Design of a Low-Latency <roman>d<italic>v</italic></roman>/<roman>d<italic>t</italic></roman> and <roman>d<italic>i</italic></roman>/<roman>d<italic>t</italic></roman> Closed-Loop Active Gate Driver for SiC MOSFETs With Simple Structure
This study addresses the issue of voltage and current overshoot in SiC MOSFET applications by proposing a novel Kelvin-source series active gate driver (AGD). The proposed AGD combines the benefits of existing structures while utilizing a closed-loop d<italic>v</italic>/d<italic>t</italic> and d<ita...
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| Principais autores: | , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2025-01-01
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| coleção: | IEEE Open Journal of Power Electronics |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/11002771/ |
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