Design of a Low-Latency <roman>d<italic>v</italic></roman>/<roman>d<italic>t</italic></roman> and <roman>d<italic>i</italic></roman>/<roman>d<italic>t</italic></roman> Closed-Loop Active Gate Driver for SiC MOSFETs With Simple Structure

This study addresses the issue of voltage and current overshoot in SiC MOSFET applications by proposing a novel Kelvin-source series active gate driver (AGD). The proposed AGD combines the benefits of existing structures while utilizing a closed-loop d<italic>v</italic>/d<italic>t</italic> and d<ita...

Cijeli opis

Bibliografski detalji

Glavni autori:	Xuhao Zhu, Wu Chen, Yubo Yuan
Format:	Artigo
Jezik:	Inglês
Izdano:	IEEE 2025-01-01
Serija:	IEEE Open Journal of Power Electronics
Teme:	Silicon carbide (SiC) power MOSFET active gate driver voltage and current overshoot switching loss electromagnetic interference (EMI)
Online pristup:	https://ieeexplore.ieee.org/document/11002771/
Oznake:	Dodaj oznaku Bez oznaka, Budi prvi tko označuje ovaj zapis!