Investigation Into Active Gate-Driving Timing Resolution and Complexity Requirements for a 1200 V 400 A Silicon Carbide Half Bridge Module
Silicon Carbide MOSFETs have lower switching losses when compared to similarly rated Silicon IGBT, but exhibit faster switching edges, larger overshoots and increased oscillatory switching behaviour, resulting in greater electro-magnetic interference (EMI) generation. Active Gate Drivers (AGD) can h...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
IEEE
2023-01-01
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| Sraith: | IEEE Open Journal of Power Electronics |
| Ábhair: | |
| Rochtain ar líne: | https://ieeexplore.ieee.org/document/10054505/ |
| Clibeanna: |
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