Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al₂O₃/AlN gate insulator layer deposited through atomic layer deposition was investigated. A favorable interface was observed between the selected insulator, atomic layer deposi...

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Autors principals:	Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2021-09-01
Col·lecció:	Membranes
Matèries:	p-GaN E-mode HEMT normally-off gate insulator lifetime reliability
Accés en línia:	https://www.mdpi.com/2077-0375/11/10/727
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