Novel super junction technique used in AlGaN/GaN HEMT for high power applications
In this paper, a novel super junction technique in AlGaN/GaN HEMT is proposed and analyzed. The novel super junction is capable of splitting the potential drops to two points rather than a single point in the lateral axis (channel axis). Technology Computer Aided Design (TCAD) physical simulator is...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IOP Publishing
2022-01-01
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| Colecção: | Materials Research Express |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1088/2053-1591/ac7cbf |
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