Statistical investigation of characteristic parameters for Au/p-TlInS2/n-InP pseudo Schottky junctions produced under the same conditions

Pseudo-Schottky junctions (PSJs) on moderately doped (MD) n-InP were fabricated by introducing a thin p-TlInS2 counter layer before the assembly of gold rectifying contact. Successively annealing treatment was applied to create a stable inversion layer at the metal-semiconductor (MS) interface. PSJs...

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Główni autorzy:	Bahattin Abay, Dilek Aslancan, Nezaket Kulakac, Ayşe Nida Beştaş, Fatih Aktaş, Seda Yazıcı
Format:	Artigo
Język:	Inglês
Wydane:	Atatürk University 2024-06-01
Seria:	Journal of Anatolian Physics and Astronomy
Hasła przedmiotowe:	n-inp p-tlins2 pseudo-schottky junction i-v and c-v measurement barrier inhomogeneities tung’s model pseudo schottky eklem i-v and c-v ölçümü engel inhomojenliği tung modeli
Dostęp online:	https://dergipark.org.tr/tr/download/article-file/4026724
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