The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance−voltage (C−V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code...
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| Autori principali: | , , , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI AG
2019-08-01
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| Serie: | Nanomaterials |
| Soggetti: | |
| Accesso online: | https://www.mdpi.com/2079-4991/9/8/1141 |
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