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The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance−voltage (C−V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code...

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Principais autores: Xiaohong Zhao, Hongliang Lu, Manli Zhao, Yuming Zhang, Yimen Zhang
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2019-08-01
Serier:Nanomaterials
Fag:
proton irradiation
deep level traps
recombination current
InP/InGaAs heterostructure
Online adgang:https://www.mdpi.com/2079-4991/9/8/1141
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