Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of...
Tallennettuna:
| Päätekijät: | , , , , , , , , , , , |
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| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
IEEE
2019-01-01
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| Sarja: | IEEE Journal of the Electron Devices Society |
| Aiheet: | |
| Linkit: | https://ieeexplore.ieee.org/document/8676035/ |
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