An InGaAs/InP DHBT With Simultaneous $\text{f}_{\boldsymbol \tau }/\text{f}_{\text {max}}~404/901$ GHz and 4.3 V Breakdown Voltage

We report an InP/InGaAs/InP double heterojunction bipolar transistor fabricated in a triple-mesa structure, exhibiting simultaneous 404 GHz f_τ and 901 GHz f_max. The emitter and base contacts were defined by electron beam lithography with better than 10 nm resolution and...

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Detalhes bibliográficos

Principais autores:	Johann C. Rode, Han-Wei Chiang, Prateek Choudhary, Vibhor Jain, Brian J. Thibeault, William J. Mitchell, Mark J. W. Rodwell, Miguel Urteaga, Dmitri Loubychev, Andrew Snyder, Ying Wu, Joel M. Fastenau, Amy W. K. Liu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2015-01-01
coleção:	IEEE Journal of the Electron Devices Society
Assuntos:	HBT InGaAs/InP DHBT THz device
Acesso em linha:	https://ieeexplore.ieee.org/document/6924726/
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