High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers
This study presents the development of a high-speed, broadband InGaAs/InP photodiode suitable for advanced sensing and optical detection applications across the critical wavelength range of 850–1550 nm. By employing an InAlAs window layer to replace conventional InP, the device significantly improve...
Tallennettuna:
| Päätekijät: | , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
MDPI AG
2025-04-01
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| Sarja: | Sensors |
| Aiheet: | |
| Linkit: | https://www.mdpi.com/1424-8220/25/9/2841 |
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