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Surface passivation of random alloy AlGaAsSb avalanche photodiode

Abstract AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by conformal coating of Al2O3 via atomic layer d...

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Váldodahkkit: Peng Cao, Hongling Peng, Tiancai Wang, Vibha Srivastava, Manoj Kesaria, Minghui You, Qiandong Zhuang, Wanhua Zheng
Materiálatiipa: Artigo
Giella:Inglês
Almmustuhtton: Wiley 2023-09-01
Ráidu:Electronics Letters
Fáttát:
Liŋkkat:https://doi.org/10.1049/ell2.12956
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