High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature
We report the design, epitaxial growth, and room-temperature operation of a high-gain AlInAsSb-based avalanche photodiode (APD) for short-wavelength infrared (SWIR) detection at 1.55 µm. The device employs SAGCM structure to confine the electric field within the multiplication region while suppressi...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
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MDPI AG
2026-04-01
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| Schriftenreihe: | Photonics |
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| Online-Zugang: | https://www.mdpi.com/2304-6732/13/4/374 |
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