High-Gain AlInAsSb SACM Avalanche Photodiode for SWIR Detection at Room Temperature

We report the design, epitaxial growth, and room-temperature operation of a high-gain AlInAsSb-based avalanche photodiode (APD) for short-wavelength infrared (SWIR) detection at 1.55 µm. The device employs SAGCM structure to confine the electric field within the multiplication region while suppressi...

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Detalhes bibliográficos

Principais autores:	Ming Liu, Shupei Jin, Dongliang Zhang, Songlin Yu, Mingxin Yao, Xiaoning Guan, Feng Zhou, Pengfei Lu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2026-04-01
coleção:	Photonics
Assuntos:	AlInAsSb avalanche photodiode (APD) room temperature
Acesso em linha:	https://www.mdpi.com/2304-6732/13/4/374
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