Surface passivation of random alloy AlGaAsSb avalanche photodiode
Abstract AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by conformal coating of Al2O3 via atomic layer d...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Wiley
2023-09-01
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| Schriftenreihe: | Electronics Letters |
| Schlagworte: | |
| Online-Zugang: | https://doi.org/10.1049/ell2.12956 |
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