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Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP multiplication layer of <inline-formula> <tex-math n...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Afshan Khaliq, Xinyi Zhou, Hong-Yu Chai, Munir Ali, Hao Wu, Oussama Gassab, Hong Liu, Duo Xiao, Xiao-Guang Yang, Sichao Du
Format: Artigo
Sprache:Inglês
Veröffentlicht: IEEE 2024-01-01
Schriftenreihe:IEEE Access
Schlagworte:
Adaptive optics
avalanche photodiode
LiDAR
linear mode
negative differential resistance
quenching
Online-Zugang:https://ieeexplore.ieee.org/document/10487920/
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