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Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating. An optimized three stage InP multiplication layer of <inline-formula> <tex-math n...

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Furkejuvvon:
Váldodahkkit: Afshan Khaliq, Xinyi Zhou, Hong-Yu Chai, Munir Ali, Hao Wu, Oussama Gassab, Hong Liu, Duo Xiao, Xiao-Guang Yang, Sichao Du
Materiálatiipa: Artigo
Giella:Inglês
Almmustuhtton: IEEE 2024-01-01
Ráidu:IEEE Access
Fáttát:
Adaptive optics
avalanche photodiode
LiDAR
linear mode
negative differential resistance
quenching
Liŋkkat:https://ieeexplore.ieee.org/document/10487920/
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