Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depen...

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Hlavní autoři:	Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova, Jean Chamberlain Chedjou, Kyandoghere Kyamakya
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	MDPI AG 2020-11-01
Edice:	Applied Sciences
Témata:	MOSFET degradation lateral transition capacitance threshold voltage local charge
On-line přístup:	https://www.mdpi.com/2076-3417/10/21/7935
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