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Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depen...

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Principais autores: Atabek E. Atamuratov, Ahmed Yusupov, Zukhra A. Atamuratova, Jean Chamberlain Chedjou, Kyandoghere Kyamakya
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2020-11-01
Serier:Applied Sciences
Fag:
MOSFET
degradation
lateral transition capacitance
threshold voltage
local charge
Online adgang:https://www.mdpi.com/2076-3417/10/21/7935
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