Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection
In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depen...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI AG
2020-11-01
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| Schriftenreihe: | Applied Sciences |
| Schlagworte: | |
| Online-Zugang: | https://www.mdpi.com/2076-3417/10/21/7935 |
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