Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment
We have studied the process of ion implantation at small-angle ion bombardment of SiO2 (001) film at low values of initial energy (up to 5 keV). Along with scattered O+ ions, ion implantation is observed. It has shown that the geometric parameters of the surface semichannel affect the bombardment an...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Artigo |
| Language: | Inglês |
| Published: |
V.N. Karazin Kharkiv National University Publishing
2025-06-01
|
| Series: | East European Journal of Physics |
| Subjects: | |
| Online Access: | https://periodicals.karazin.ua/eejp/article/view/25072 |
| Tags: |
No Tags, Be the first to tag this record!
|