Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment
We have studied the process of ion implantation at small-angle ion bombardment of SiO2 (001) film at low values of initial energy (up to 5 keV). Along with scattered O+ ions, ion implantation is observed. It has shown that the geometric parameters of the surface semichannel affect the bombardment an...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
V.N. Karazin Kharkiv National University Publishing
2025-06-01
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| Edice: | East European Journal of Physics |
| Témata: | |
| On-line přístup: | https://periodicals.karazin.ua/eejp/article/view/25072 |
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