Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment
We have studied the process of ion implantation at small-angle ion bombardment of SiO2 (001) film at low values of initial energy (up to 5 keV). Along with scattered O+ ions, ion implantation is observed. It has shown that the geometric parameters of the surface semichannel affect the bombardment an...
-д хадгалсан:
| Үндсэн зохиолчид: | , , , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
V.N. Karazin Kharkiv National University Publishing
2025-06-01
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| Цуврал: | East European Journal of Physics |
| Нөхцлүүд: | |
| Онлайн хандалт: | https://periodicals.karazin.ua/eejp/article/view/25072 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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