Combination of thermionic emission and tunneling mechanisms to analyze the leakage current in 4H-SiC Schottky barrier diodes
A new method to analyze reverse characteristics of 4H-SiC Schottky barrier diode has been presented in this paper. The model incorporates both the current induced by the tunneling of carriers through the Schottky barrier and that induced by the thermionic emission of carriers across the metal–semico...
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| Auteur principal: | |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2019-03-01
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| Collection: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Sujets: | |
| Accès en ligne: | http://journal-spqeo.org.ua/n1_2019/P019-025abstr.html |
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