Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes
In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga2O3 Schottky barrier diodes. The main idea of this method is based on the intersection of I–V curves of thermionic emis...
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| Autor principal: | |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
National Academy of Sciences of Ukraine. Institute of Semi conductor physics.
2019-11-01
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| coleção: | Semiconductor Physics, Quantum Electronics & Optoelectronics |
| Assuntos: | |
| Acesso em linha: | http://journal-spqeo.org.ua/n4_2019/P397-403abstr.html |
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