QR-koodi

The Dual Effects of Gate Dielectric Constant in Tunnel FETs

In this paper, tunnel FETs (TFET) with different gate dielectrics are studied. The effects of gate dielectric constant in the TFET are investigated with qualitative analysis and numerical simulations. The regulation of gate-channel coupling and the modulation of electric field at the tunnel junction...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Päätekijät: Hao Wang, Sheng Chang, Jin He, Qijun Huang, Feng Liu
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: IEEE 2016-01-01
Sarja:IEEE Journal of the Electron Devices Society
Aiheet:
Linkit:https://ieeexplore.ieee.org/document/7570188/
Tagit: Lisää tagi
Ei tageja, Lisää ensimmäinen tagi!