Design and Performance Optimization of a Bi-Channel Ge-GaAs Vertical Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
In this paper, an innovative vertical bi-channel tunnel field effect transistor is presented that exploits line tunneling mechanism to achieve improved electrical performance. In this device, the source contains germanium, while the channel and drain regions consist of GaAs., which results in a type...
Na minha lista:
| Hovedforfatter: | |
|---|---|
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Iran University of Science and Technology
2024-06-01
|
| Serier: | Iranian Journal of Electrical and Electronic Engineering |
| Fag: | |
| Online adgang: | http://ijeee.iust.ac.ir/article-1-2955-en.pdf |
| Tags: |
Ingen Tags, Vær først til at tagge denne postø!
|