Design and Performance Optimization of a Bi-Channel Ge-GaAs Vertical Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate

In this paper, an innovative vertical bi-channel tunnel field effect transistor is presented that exploits line tunneling mechanism to achieve improved electrical performance. In this device, the source contains germanium, while the channel and drain regions consist of GaAs., which results in a type...

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Bibliografiset tiedot

Päätekijä:	Zahra Ahangari
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	Iran University of Science and Technology 2024-06-01
Sarja:	Iranian Journal of Electrical and Electronic Engineering
Aiheet:	band to band tunneling. gate workfunction heterojnction line tunneling tunnel field effect transistor
Linkit:	http://ijeee.iust.ac.ir/article-1-2955-en.pdf
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