A Novel Gate-Normal Tunneling Field-Effect Transistor With Dual-Metal Gate
In this combined experiment and simulation study we investigate a SiGe/Si based gate-normal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is improved electrostatics at the boundary of the tunn...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2018-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/8430501/ |
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