Physical Operations of a Self-Powered IZTO/β-Ga₂O₃ Schottky Barrier Diode Photodetector

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga₂O₃ by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by usi...

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Detalles Bibliográficos

Principais autores:	Madani Labed, Hojoong Kim, Joon Hui Park, Mohamed Labed, Afak Meftah, Nouredine Sengouga, You Seung Rim
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2022-03-01
Series:	Nanomaterials
Assuntos:	IZTO/β-Ga<sub>2</sub>O<sub>3</sub> Schottky diode solar-blind self-powered photodetector modeling
Acceso en liña:	https://www.mdpi.com/2079-4991/12/7/1061
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